www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83503 810 rev. 2.3, 14-oct-09 tcet1100, tcet1100g vishay semiconductors optocoupler, phototransisto r output, high temperature description the tcet110. consists of a ph ototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. agency approvals ? ul1577, file no. e52744, double protection ? cul tested, file a52744 ? bsi: en 60065:2002, en 60950:2000 ? din en 60747-5-5 (vde 0884) ?fimko features ? high common mode rejection ? low temperature coefficient of ctr ? ctr offered in 9 groups ? reinforced isolation provides circuit protection against electrical shock (safety class ii) ? isolation materials a ccording to ul 94 v-o ? pollution degree 2 (din/vde 0110/resp. iec 60664) ? climatic classification 55/100/21 (iec 60068 part 1) ? rated impulse voltage (t ransient overvoltage) v iotm = 6 kv peak ? isolation test voltage (partial discharge test voltage) v pd = 1.6 kv ? rated isolation voltage (rms includes dc) v iowm = 600 v rms ? rated recurring peak voltage (repetitive) v iorm = 848 v peak ? creepage current resistance according to vde 0303/ iec 60112 comparative tracking index: cti 175 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications circuits for safe protective separation against electrical shock according to safety cla ss ii (reinforced isolation): ? for appl. class i - iv at mains voltage 300 v ? for appl. class i - iii at mains voltage 600 v according to din en 60747-5-5 (vde 0884), suitable for: - switch-mode power supplies - line receiver - computer peripheral interface - microprocessor system interface 17197_5 c e ac 12 3 4 v de c 17197_4
document number: 83503 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 2.3, 14-oct-09 811 tcet1100, tcet1100g optocoupler, phototransistor output, high temperature vishay semiconductors note g = lead form 10.16 mm; g is not marked on the body notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to wave profile for soldering conditions for through hole devices (dip). order information part remarks tcet1100 ctr 50 % to 600 %, dip-4 tcet1101 ctr 40 % to 80 %, dip-4 tcet1102 ctr 63 % to 125 %, dip-4 tcet1103 ctr 100 % to 200 %, dip-4 tcet1104 ctr 160 % to 320 %, dip-4 tcet1105 ctr 50 % to 150 %, dip-4 tcet1106 ctr 100 % to 300 %, dip-4 tcet1107 ctr 80 % to 160 %, dip-4 tcet1108 ctr 130 % to 260 %, dip-4 tcet1109 ctr 200 % to 400 %, dip-4 tcet1100g ctr 50 % to 600 %, dip-4, 400 mil tcet1101g ctr 40 % to 80 %, dip-4, 400 mil tcet1102g ctr 63 % to 125 %, dip-4, 400 mil TCET1103G ctr 100 % to 200 %, dip-4, 400 mil tcet1104g ctr 160 % to 320 %, dip-4, 400 mil tcet1105g ctr 50 % to 150 %, dip-4, 400 mil tcet1106g ctr 100 % to 300 %, dip-4, 400 mil tcet1107g ctr 80 % to 160 %, dip-4, 400 mil tcet1108g ctr 130 % to 260 %, dip-4, 400 mil tcet1109g ctr 200 % to 400 %, dip-4, 400 mil absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a output collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma coupler isolation test voltage (rms) t = 1 min v iso 5000 v rms operating ambient temperature range t amb - 40 to + 100 c storage temperature range t stg - 55 to + 125 c soldering temperature (2) 2 mm from case, 10 s t sld 260 c
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83503 812 rev. 2.3, 14-oct-09 tcet1100, tcet1100g vishay semiconductors optocoupler, phototransistor output, high temperature note (1) the thermal model is represented in the t hermal network below. each resistance value given in this model can be used to calcula te the temperatures at each node for a given operat ing condition. the thermal resistance from board to ambient will be dependent on th e type of pcb, layout and thickness of copper traces . for a detailed explanation of the thermal model, please reference vishay?s ?thermal characteristics of optocouplers? application note. (2) for 2 layer fr4 board (4" x 3" x 0.062"). note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. thermal characteristics (1) parameter symbol value unit led power dissipation p diss 100 mw output power dissipation p diss 150 mw maximum led junction temperature t jmax. 125 c maximum output die junction temperature t jmax. 125 c thermal resistance, junction emitter to board eb 173 c/w thermal resistance, junction emitter to case ec 149 c/w thermal resistance, junction detector to board db 111 c/w thermal resistance, junction detector to case dc 127 c/w thermal resistance, junction emitter to junction detector ed 173 c/w thermal resistance, board to ambient (2) ba 197 c/w thermal resistance, case to ambient (2) ca 4041 c/w electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf output collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7v collector emitter cut-off current v ce = 20 v, i f = 0 a, e = 0 i ceo 10 100 na coupler collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf t a ca t c t jd t je t b ec eb dc db ba de t a 19996 package
document number: 83503 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 2.3, 14-oct-09 813 tcet1100, tcet1100g optocoupler, phototransistor output, high temperature vishay semiconductors note according to din en 60747-5-5 (see figure 2). this optocoupler is suitable for safe el ectrical isolation onl y within the safety ratings. compliance with the safety ratings shall be ensured by means of suitable protective circuits. current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 1 ma tcet1101 tcet1101g ctr 13 30 % tcet1102 tcet1102g ctr 22 45 % tcet1103 TCET1103G ctr 34 70 % tcet1104 tcet1104g ctr 56 90 % v ce = 5 v, i f = 5 ma tcet1100 tcet1100g ctr 50 600 % tcet1105 tcet1105g ctr 50 150 % tcet1106 tcet1106g ctr 100 300 % tcet1107 tcet1107g ctr 80 160 % tcet1108 tcet1108g ctr 130 260 % tcet1109 tcet1109g ctr 200 400 % v ce = 5 v, i f = 10 ma tcet1101 tcet1101g ctr 40 80 % tcet1102 tcet1102g ctr 63 125 % tcet1103 TCET1103G ctr 100 200 % tcet1104 tcet1104g ctr 160 320 % maximum safety ratings parameter test condition symbol min. typ. max. unit input forward current i f 130 ma output power dissipation p diss 265 mw coupler rated impulse voltage v iotm 6kv safety temperature t si 150 c insulation rated parameters parameter test condition symbol min. typ. max. unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v iotm 6kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83503 814 rev. 2.3, 14-oct-09 tcet1100, tcet1100g vishay semiconductors optocoupler, phototransistor output, high temperature fig. 1 - derating diagram fig. 2 - test pulse diagram for sample test according to din en 60747-5-5/din en 60747-; iec 60747 fig. 3 - test circuit, non-saturated operation fig. 4 - test circuit, saturated operation 0 25 50 75 125 0 50 100 150 200 300 p tot - total po w er dissipation (m w ) t si - safety temperat u re (c) 150 94 91 8 2 100 250 phototransistor p si (m w ) ir-diode i si (ma) t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v io w m v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2 switching characteristics parameter test condition symbol min. typ. max. unit delay time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t d 3s rise time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t r 3s turn-on time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t on 6s storage time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t s 0.3 s fall time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t f 4.7 s turn-off time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t off 5s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t on 9s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t off 10 s channel i channel ii 95 10 8 04 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adj u sted thro u gh inp u t amplit u de oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10 8 43 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m
document number: 83503 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 2.3, 14-oct-09 815 tcet1100, tcet1100g optocoupler, phototransistor output, high temperature vishay semiconductors fig. 5 - switching times typical characteristics t amb = 25 c, unless otherwise specified fig. 6 - total power dissipat ion vs. ambient temperature fig. 7 - forward current vs. forward voltage fig. 8 - relative current transfer ratio vs. ambient temperature fig. 9 - collector dark current vs. ambient temperature t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p p u lse d u ration t d delay time t r rise time t on (= t d + t r ) t u rn-on time t s storage time t f fall time t off (= t s + t f )t u rn-off time 96 1169 8 0 50 100 150 200 250 300 040 8 0 120 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 96 11700 co u pled de v ice phototransistor ir-diode 0.1 1 10 100 1000 0 v f - for w ard v oltage ( v ) 96 11 8 62 i f - for w ard c u rrent (ma) 1.6 1.2 0. 8 0.4 2.0 - 25 0 25 50 0 0.5 1.0 1.5 2.0 ctr rel - relati v e c u rrent transfer ratio 95 11025 75 t am b - am b ient temperat u re (c) v ce = 5 v i f = 5 ma 0255075 1 10 100 1000 10 000 i ceo - collector dark c u rrent, 100 95 11026 w ith open base (na) v ce = 20 v i f = 0 t am b - am b ient temperat u re (c)
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83503 816 rev. 2.3, 14-oct-09 tcet1100, tcet1100g vishay semiconductors optocoupler, phototransistor output, high temperature fig. 10 - collector current vs. forward current fig. 11 - collector current vs. collector emitter voltage fig. 12 - collector emitter saturation voltage vs. collector current fig. 13 - current transfer ratio vs. forward current fig. 14 - turn-on/off time vs. collector current fig. 15 - turn-on/off time vs. forward current 0.1 1 10 0.01 0.1 1 100 i c - collector c u rrent (ma) i f - for w ard c u rrent (ma) 100 95 11027 10 v ce = 5 v 0.1 1 10 0.1 1 10 100 v ce - collector emitter v oltage ( v ) 100 95 109 8 5 i c - collector c u rrent (ma) i f = 50 ma 5 ma 2 ma 1 ma 20 ma 10 ma 110 0 0.2 0.4 0.6 0. 8 1.0 v cesat - collector emitter sat u ration v oltage ( v ) i c - collector c u rrent (ma) 100 ctr = 50 % u sed 20 % u sed 95 1102 8 10 % u sed 0.1 1 10 1 10 100 1000 ctr - c u rrent transfer ratio ( % ) i f - for w ard c u rrent (ma) 100 95 11029 v ce = 5 v 04 0 2 4 6 8 10 i c - collector c u rrent (ma) 8 95 11030 t on /t off - t u rn-on /t u rn-off time ( s) n on-sat u rated operation v s = 5 v r l = 100 t off t on 6 2 01015 0 10 20 30 40 50 i f - for w ard c u rrent (ma) 20 95 11031 t on /t off - t u rn-on/t u rn-off time ( s) sat u rated operation v s = 5 v r l = 1 k t off t on 5
document number: 83503 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 2.3, 14-oct-09 817 tcet1100, tcet1100g optocoupler, phototransistor output, high temperature vishay semiconductors package dimensions in millimeters package marking 0.25 typ. i17 8 027-4 6.5 0.3 4.5 8 0.3 2.54 typ. 3.5 0.1 4.5 0.3 0 to 15 1.3 0.1 0.4 0.1 7.62 typ. pin 1 identifier 2. 8 0.5 7.62 to 9.5 0.5 0.1 10.16 typ. 7.62 typ. tcet1100g type 4.5 0.3 20 8 02-3 2.55 0.25 21764-3 et1100 v y ww 24
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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